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This X25650 device has been acquired by IC MICROSYSTEMS from Xicor, Inc.
ICmic
TM
IC MICROSYSTEMS
64K
2
X25650
5MHz SPI Serial E PROM with Block Lock
TM
8K x 8 Bit
Protection
FEATURES *5MHz Clock Rate *Low Power CMOS
DESCRIPTION 2 The X25650 is a CMOS 65,536-bit serial E PROM, internally organized as 8K x 8. The X25650 features a
*2.5V To 5.5V Power Supply *SPI Modes (0,0 & 1,1) *8K X 8 Bits
32 Byte Page Mode *Block LockTM Protection 2 Protect 1/4, 1/2 or all of E PROM Array *Programmable Hardware Write Protection In-Circuit Programmable ROM Mode *Built-in Inadvertent Write Protection
Power-Up/Down protection circuitry Write Enable Latch
<1A Standby Current <5mA Active Current
Serial Peripheral Interface (SPI) and software protocol allowing operation on a simple three-wire bus. The bus signals are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is
controlled through a chip select (CS) input, allowing any number of devices to share the same bus. The X25650 also features two additional inputs that provide the end user with added flexibility. By
asserting the HOLD input, the X25650 will ignore transitions on its inputs, thus allowing the host to service
higher priority interrupts. The WP input can be used as a hardwire input to the X25650 disabling all write
Write Protect Pin *Self-Timed Write Cycle 5ms Write Cycle Time (Typical) *High Reliability
Endurance: 100,000 cycles Data Retention: 100 Years
attempts to the status register, thus providing a mechanism for limiting end user capability of altering 0, 1/4,
1/2 or all of the memory.
The X25650 utilizes Xicor's proprietary Direct WriteTM cell, providing a minimum endurance of 100,000
cycles and a minimum data retention of 100 years.
ESD protection: 2000V on all pins
*Packages
8-Lead SOIC 20-Lead TSSOP
FUNCTIONAL DIAGRAM
STATUS REGISTER WRITE PROTECT LOGIC
X DECODE LOGIC 8K BYTE ARRAY
64 64 X 256
SO SI SCK CS COMMAND DECODE
HOLD
AND CONTROL LOGIC
64 64 X 256
128 128 X 256
WP
WRITE CONTROL AND TIMING LOGIC 32 8 Y DECODE DATA REGISTER
Direct Write
TM
and Block Lock
TM
Protection is a trademark of Xicor, Inc.
1
7037 FRM F01
(c)Xicor, Inc. 1994, 1995, 1996 Patents Pending 7037-1.5 6/19/97 T1/C0/D0 SH
Characteristics subject to change without notice
X25650
PIN DESCRIPTIONS Serial Output (SO) SO is a push/pull serial data output pin. During a read cycle, data is shifted out on this pin. Data is clocked out by the falling edge of the serial clock. Serial Input (SI) SI is the serial data input pin. All opcodes, byte addresses, and data to be written to the memory are input on this pin. Data is latched by the rising edge of the serial clock. Serial Clock (SCK) The Serial Clock controls the serial bus timing for data input and output. Opcodes, addresses, or data present on the SI pin are latched on the rising edge of the clock input, while data on the SO pin change after the falling edge of the clock input. Chip Select (CS) When CS is HIGH, the X25650 is deselected and the SO output pin is at high impedance and unless an internal write operation is underway, the X25650 will be in the standby power mode. CS LOW enables the X25650, placing it in the active power mode. It should be noted that after power-up, a HIGH to LOW transition on CS is required prior to the start of any operation. Write Protect (WP) When WP is LOW and the nonvolatile bit WPEN is "1", nonvolatile writes to the X25650 status register are disabled, but the part otherwise functions normally. When WP is held HIGH, all functions, including nonvolatile writes operate normally. WP going LOW while CS is still LOW will interrupt a write to the PIN NAMES Symbol CS
SO SI SCK
X25650 status register. If the internal write cycle has already been initiated, WP going LOW will have no affect on a write. The WP pin function is blocked when the WPEN bit in the status register is "0". This allows the user to install the X25650 in a system with WP pin grounded and still be able to write to the status register. The WP pin functions will be enabled when the WPEN bit is set "1". Hold (HOLD) HOLD is used in conjunction with the CS pin to pause the device. Once the part is selected and a serial sequence is underway, HOLD may be used to pause
PIN CONFIGURATION
NOT TO SCALE
SOIC CS 0.197" Max SO WP V SS 1 2 3 4 0.244" X25650 8 7 6 5 V CC HOLD SCK SI
TSSOP NC CS SO SO NC NC WP VSS NC NC 1 2 3 4 5 6 7 8 9 10 20 20 19 19 18 18 17 17 16 16 X25650 15 15 14 14 13 13 12 12 11 11 0.252"
7037 FRM F02
NC VCC HOLD HOLD NC NC SCK SI NC NC
Description
Chip Select Input Serial Output Serial Input Serial Clock Input Write Protect Input Ground Supply Voltage Hold Input No Connect
7037 FRM T01
0.300" Max
WP
VSS VCC
HOLD
NC
* Pin 2 and Pin 3 are internally connected. Only one CS needs to be connected externally.
2
X25650
the serial communication with the controller without resetting the serial sequence. To pause, HOLD must be brought LOW while SCK is LOW. To resume communication, HOLD is brought HIGH, again while SCK is LOW. If the pause feature is not used, HOLD should be held HIGH at all times. PRINCIPLES OF OPERATION The X25650 is a 8K x 8 E2PROM designed to interface directly with the synchronous serial peripheral interface (SPI) of many popular microcontroller families. The X25650 contains an 8-bit instruction register. It is accessed via the SI input, with data being clocked in on the rising SCK. CS must be LOW and the HOLD and WP inputs must be HIGH during the entire operation. Table 1 contains a list of the instructions and their opcodes. All instructions, addresses and data are transferred MSB first. Data input is sampled on the first rising edge of SCK after CS goes LOW. SCK is static, allowing the user to stop the clock and then resume operations. If the clock line is shared with other peripheral devices on the SPI bus, the user can assert the HOLD input to place the X25650 into a "PAUSE" condition. After releasing HOLD, the X25650 will resume operation from the point when HOLD was first asserted. Write Enable Latch The X25650 contains a "write enable" latch. This latch must be SET before a write operation will be completed internally. The WREN instruction will set the latch and the WRDI instruction will reset the latch. This latch is automatically reset upon a power-up condition and after the completion of a byte, page, or status register write cycle. Status Register The RDSR instruction provides access to the status register. The status register may be read at any time, even during a write cycle. The status register is formatted as follows:
7 WPEN 6 X 5 X 4 X 3 BL1 2 BL0 1 WEL 0 WIP
7037 FRM T02
WPEN, BL0 and BL1 are set by the WRSR instruction. WEL and WIP are read-only and automatically set by other operations. The Write-In-Process (WIP) bit indicates whether the X25650 is busy with a write operation. When set to a "1", a write is in progress, when set to a "0", no write is in progress. During a write, all other bits are set to "1". The Write Enable Latch (WEL) bit indicates the status of the "write enable" latch. When set to a "1", the latch is set, when set to a "0", the latch is reset. The Block Lock (BL0 and BL1) bits are nonvolatile and allow the user to select one of four levels of protection. The X25650 is divided into four 16384-bit segments. One, two, or all four of the segments may be protected. That is, the user may read the segments but will be unable to alter (write) data within the selected segments. The partitioning is controlled as illustrated below. Status Register Bits BL1
0 0 1 1
BL0
0 1 0 1
Array Addresses Protected
None $1800-$1FFF $1000-$1FFF $0000-$1FFF
7037 FRM T03
Table 1. Instruction Set Instruction Name
WREN WRDI RDSR WRSR READ WRITE
Instruction Format*
0000 0110 0000 0100 0000 0101 0000 0001 0000 0011 0000 0010
Operation
Set the Write Enable Latch (Enable Write Operations) Reset the Write Enable Latch (Disable Write Operations) Read Status Register Write Status Register Read Data from Memory Array beginning at selected address Write Data to Memory Array beginning at Selected Address (1 to 32 Bytes)
7037 FRM T04
*Instructions are shown MSB in leftmost position. Instructions are transferred MSB first.
3
X25650
The Write-Protect-Enable (WPEN) bit is available for the X25650 as a nonvolatile enable bit for the WP pin.
WPEN WP WEL Protected Unprotected Status Blocks Blocks Register
0 0 1 1 X X
X X LOW LOW HIGH HIGH
0 1 0 1 0 1
Protected Protected Protected Protected Protected Protected
Protected Writable Protected Writable Protected Writable
Protected Writable Protected Protected Protected Writable
7037 FRM T05
at the next address can be read sequentially by continuing to provide clock pulses. The address is automatically incremented to the next higher address after each byte of data is shifted out. When the highest address is reached ($1FFF) the address counter rolls over to address $0000 allowing the read cycle to be continued indefinitely. The read operation is terminated by taking CS HIGH. Refer to the read E2PROM array operation sequence illustrated in Figure 1. To read the status register the CS line is first pulled LOW to select the device followed by the 8-bit RDSR instruction. After the RDSR opcode is sent, the contents of the status register are shifted out on the SO line. Figure 2 illustrates the read status register sequence. Write Sequence Prior to any attempt to write data into the X25650, the "write enable" latch must first be set by issuing the WREN instruction (See Figure 3). CS is first taken LOW, then the WREN instruction is clocked into the X25650. After all eight bits of the instruction are transmitted, CS must then be taken HIGH. If the user continues the write operation without taking CS HIGH after issuing the WREN instruction, the write operation will be ignored. To write data to the E2PROM memory array, the user issues the WRITE instruction, followed by the address and then the data to be written. This is minimally a thirty-two clock operation. CS must go LOW and remain LOW for the duration of the operation. The host may continue to write up to 32 bytes of data to the X25650. The only restriction is the 32 bytes must reside on the same page. If the address counter reaches the end of the page and the clock continues, the counter will "roll over" to the first address of the page and overwrite any data that may have been written. For the write operation (byte or page write) to be completed, CS can only be brought HIGH after bit 0 of data byte N is clocked in. If it is brought HIGH at any other time the write operation will not be completed. Refer to Figures 4 and 5 below for a detailed illustration of the write sequences and time frames in which CS going HIGH are valid. To write to the status register, the WRSR instruction is followed by the data to be written. Data bits 0, 1, 4, 5 and 6 must be "0". Figure 6 illustrates this sequence. While the write is in progress following a status register or E2PROM write sequence, the status register may be read to check the WIP bit. During this time the WIP bit will be HIGH.
4
Programmable Hardware Write Protection The Write Protect (WP) pin and the nonvolatile Write Protect Enable (WPEN) bit in the Status Register control the Programmable Hardware Write Protect feature. Hardware Write Protection is enabled when WP pin is LOW, and the WPEN bit is "1". Hardware Write Protection is disabled when either the WP pin is HIGH or the WPEN bit is "0". When the chip is hardware write protected, nonvolatile writes are disabled to the Status Register, including the Block Lock bits and the WPEN bit itself, as well as the block-protected sections in the memory array. Only the sections of the memory array that are not block-protected can be written. In Circuit Programmable ROM Mode Note that since the WPEN bit is write protected, it cannot be changed back to a LOW state; so write protection is enabled as long as the WP pin is held LOW. Thus an In Circuit Programmable ROM function can be emplemented by hardwiring the WP pin to Vss, writing to and Block Locking the desired portion of the array to be ROM, and then programming the WPEN bit HIGH. The table above defines the program protect status for each combination of WPEN and WP. Clock and Data Timing Data input on the SI line is latched on the rising edge of SCK. Data is output on the SO line by the falling edge of SCK. Read Sequence When reading from the E2PROM memory array, CS is first pulled LOW to select the device. The 8-bit READ instruction is transmitted to the X25650, followed by the 16-bit address of which the last 13 are used. After the READ opcode and address are sent, the data stored in the memory at the selected address is shifted out on the SO line. The data stored in memory
X25650
Hold Operation The HOLD input should be HIGH (at VIH) under normal operation. If a data transfer is to be interrupted HOLD can be pulled LOW to suspend the transfer until it can be resumed. The only restriction is the SCK input must be LOW when HOLD is first pulled LOW and SCK must also be LOW when HOLD is released. The HOLD input may be tied HIGH either directly to VCC or tied to VCC through a resistor. Operational Notes The X25650 powers-up in the following state: * The device is in the low power standby state. * A HIGH to LOW transition on CS is required to enter an active state and receive an instruction. * SO pin is high impedance. * The "write enable" latch is reset. Data Protection The following circuitry has been included to prevent inadvertent writes: * The "write enable" latch is reset upon power-up. * A WREN instruction must be issued to set the "write enable" latch. * CS must come HIGH at the proper clock count in order to start a write cycle.
Figure 1. Read E2PROM Array Operation Sequence
CS
0 SCK
1
2
3
4
5
6
7
8
9
10
20 21 22 23 24 25 26 27 28 29 30
INSTRUCTION SI
16 BIT ADDRESS 15 14 13 3 2 1 0
HIGH IMPEDANCE SO
DATA OUT 7 MSB 6 5 4 3 2 1 0
7037 FRM F03
Figure 2. Read Status Register Operation Sequence
CS
0 SCK
1
2
3
4
5
6
7
8
9
10 11 12 13 14
INSTRUCTION SI
DATA OUT HIGH IMPEDANCE SO 7 MSB 6 5 4 3 2 1 0
7037 FRM F04
5
X25650
Figure 3. Write Enable Latch Sequence
CS
0 SCK
1
2
3
4
5
6
7
SI
SO
HIGH IMPEDANCE
7037 FRM F05
Figure 4. Byte Write Operation Sequence
CS
0 SCK
1
2
3
4
5
6
7
8
9
10
20 21 22 23 24 25 26 27 28 29 30 31
INSTRUCTION SI
16 BIT ADDRESS 15 14 13 3 2 1 0 7 6 5
DATA BYTE 4 3 2 1 0
HIGH IMPEDANCE SO
7037 FRM F06
6
X25650
Figure 5. Page Write Operation Sequence
CS
0 SCK
1
2
3
4
5
6
7
8
9
10
20 21 22 23 24 25 26 27 28 29 30 31
INSTRUCTION SI
16 BIT ADDRESS 15 14 13 3 2 1 0 7 6
DATA BYTE 1 5 4 3 2 1 0
CS
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCK
DATA BYTE 2 SI 7 6 5 4 3 2 1 0 7 6
DATA BYTE 3 5 4 3 2 1 0 6
DATA BYTE N 5 4 3 2 1 0
7037 FRM F07
Figure 6. Write Status Register Operation Sequence
CS
0 SCK
1
2
3
4
5
6
7
8
9
10
11 12 13 14 15
INSTRUCTION SI 7 6 5
DATA BYTE 4 3 2 1 0
SO
HIGH IMPEDANCE
7037 FRM F08
7
X25650
ABSOLUTE MAXIMUM RATINGS* Temperature under Bias....................-65C to +135C Storage Temperature ........................-65C to +150C Voltage on any Pin with Respect to VSS .........................................................-1V to +7V D.C. Output Current ............................................. 5mA (Soldering, 10 seconds) ..............................300C RECOMMENDED OPERATING CONDITIONS Temperature
Commercial Industrial Military
*COMMENT Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and the functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Supply Voltage
X25650 X25650-2.5
Min.
0C -40C -55C
Max.
+70C +85C +125C
7037 FRM T06
Limits
5V 10% 2.5V to 5.5V
7037 FRM T07
D.C. OPERATING CHARACTERISTICS (Over the recommended operating conditions unless otherwise specified.) Symbol
ICC ISB ILI ILO VIL(1) VIH(1) VOL1 VOH1 VOL2 VOH2
Parameter
VCC Supply Current (Active) VCC Supply Current (Standby) Input Leakage Current Output Leakage Current Input LOW Voltage Input HIGH Voltage Output LOW Voltage Output HIGH Voltage Output LOW Voltage Output HIGH Voltage
Limits Min. Max.
5 1 10 10 -1 VCC x 0.7 VCC-0.8 0.4 VCC-0.3 VCC x 0.3 VCC + 0.5 0.4
Units
mA A A A V V V V V V
Test Conditions
SCK = VCC x 0.1/VCC x 0.9 @ 5MHz,
CS = VCC, VIN = VSS or VCC - 0.3V VIN = VSS to VCC VOUT = VSS to VCC
IOL = 3mA, VCC = 5V IOH = -1.6mA, VCC = 5V IOL = 1.5mA, VCC = 3V IOH = -0.4mA, VCC = 3V
7037 FRM T08 POWER-UP TIMING
Symbol
TPUR(3) TPUW(3)
Parameter
Power-up to Read Operation Power-up to Write Operation
Min.
Max.
1 1
Units
ms ms
7037 FRM T09
CAPACITANCE TA = +25C, f = 1MHz, VCC = 5V Symbol
CI/O(3) CIN(3)
Parameter
Output Capacitance (SO) Input Capacitance (SCK, SI, CS, WP, HOLD)
Max.
8 6
Units
pF pF
Test Conditions
VI/O = 0V VIN = 0V
7037 FRM T10
Notes: (1) VIL min. and VIH max. are for reference only and are not tested. (2) This parameter is periodically sampled and not 100% tested. (3) tPUR and tPUW are the delays required from the time VCC is stable until the specified operation can be initiated. These parameters are periodically sampled and not 100% tested.
8
X25650
EQUIVALENT A.C. LOAD CIRCUIT
5V 1.44K OUTPUT 1.95K 1.64K OUTPUT 4.63K 3V
A.C. CONDITIONS OF TEST
Input Pulse Levels Input Rise and Fall Times Input and OutputTiming Levels
100pF
VCC x 0.1 to VCC x 0.9 10ns VCC X 0.5
7037 FRM T11
100pF
7037 FRM F09
A.C. OPERATING CHARACTERISTICS Data Input Timing Symbol
fSCK tCYC tLEAD tLAG tWH tWL tSU tH tRI(4) tFI(4) tHD tCD tCS tWC(5)
Parameter
Clock Frequency Cycle Time CS Lead Time CS Lag Time Clock HIGH Time Clock LOW Time Data Setup Time Data Hold Time Data In Rise Time Data In Fall Time
Min.
0 200 100 100 80 80 20 20
Max.
5
Units
MHz ns ns ns ns ns ns ns
2 2 40 40 100 10
s s ns ns ns ms
7037 FRM T12
HOLD Setup Time HOLD Hold Time CS Deselect Time
Write Cycle Time
Data Output Timing Symbol
fSCK tDIS tV tHO tRO(4) tFO(4) tLZ(4) tHZ(4)
Parameter
Clock Frequency Output Disable Time Output Valid from Clock LOW Output Hold Time Output Rise Time Output Fall Time
Min.
0
Max.
5 100 80
Units
MHz ns ns ns ns ns ns ns
7037 FRM T13
0 50 50 50 50
HOLD HIGH to Output in Low Z HOLD LOW to Output in High Z
Notes: (4) This parameter is periodically sampled and not 100% tested. (5) tWC is the time from the rising edge of CS after a valid write sequence has been sent to the end of the self-timed internal nonvolatile write cycle.
9
X25650
Serial Output Timing
CS tCYC SCK tV SO MSB OUT MSB-1 OUT t HO tWL LSB OUT tDIS tWH tLAG
SI
ADDR LSB IN
7037 FRM F10
Serial Input Timing
t CS CS tLEAD SCK tSU SI MSB IN tH tRI tFI LSB IN tLAG
HIGH IMPEDANCE SO
7037 FRM F11
10
X25650
Hold Timing
CS tHD SCK tHZ SO tLZ tCD tHD tCD
SI
HOLD
7037 FRM F12
11
X25650
PACKAGING INFORMATION
8-LEAD PLASTIC SMALL OUTLINE GULL WING PACKAGE TYPE S
0.150 (3.80) 0.158 (4.00) PIN 1 INDEX
0.228 (5.80) 0.244 (6.20)
PIN 1
0.014 (0.35) 0.019 (0.49)
0.188 (4.78) 0.197 (5.00)
(4X) 7
0.053 (1.35) 0.069 (1.75)
0.050 (1.27)
0.004 (0.19) 0.010 (0.25)
0.010 (0.25) 0.020 (0.50) X 45
0.050" TYPICAL
0 - 8 0.0075 (0.19) 0.010 (0.25) 0.016 (0.410) 0.037 (0.937) 0.250"
0.050" TYPICAL
FOOTPRINT
0.030" TYPICAL 8 PLACES
NOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)
3926 FRM F22.1
12
X25650
PACKAGING INFORMATION
20-LEAD PLASTIC, TSSOP PACKAGE TYPE V
.025 (.65) BSC
.169 (4.3) .252 (6.4) BSC .177 (4.5)
.252 (6.4) .300 (6.6)
.047 (1.20)
.0075 (.19) .0118 (.30)
.002 (.05) .006 (.15)
.010 (.25) Gage Plane 0 - 8 .019 (.50) .029 (.75) Detail A (20X) Seating Plane
.031 (.80) .041 (1.05)
See Detail "A"
NOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)
3926 FHD F45
13
X25650
ORDERING INFORMATION X25650 Device P TG -V
Vcc Limits Blank = 5V 10% 2.5 = 2.5 to 5.5V
G = RoHS Compliant Lead-Free package Blank = Standard package. Non lead-free Temperature Range Blank = Commercial = 0C to +70C I = Industrial = -40C to +85C
Package S8 = 8-Lead SOIC V20 = 20-Lead TSSOP PART MARK CONVENTION X25650 XG Blank = 8-Lead SOIC V = 20-Lead TSSOP G = RoHS compliant lead free
X
Blank = 5V 10%, 0C to +70C I = 5V 10%, -40C to +85C AE = 2.5V to 5.5V, 0C to 70C AF = 2.5V to 5.5V, -40C to +85C
LIMITED WARRANTY Devices sold by Xicor, Inc. are covered by the warranty and patent indemnification provisions appearing in its Terms of Sale only. Xicor, Inc. makes no warranty, express, statutory, implied, or by description regarding the information set forth herein or regarding the freedom of the described devices from patent infringement. Xicor, Inc. makes no warranty of merchantability or fitness for any purpose. Xicor, Inc. reserves the right to discontinue production and change specifications and prices at any time and without notice. Xicor, Inc. assumes no responsibility for the use of any circuitry other than circuitry embodied in a Xicor, Inc. product. No other circuits, patents, licenses are implied.
U.S. PATENTS Xicor products are covered by one or more of the following U.S. Patents: 4,263,664; 4,274,012; 4,300,212; 4,314,265; 4,326,134; 4,393,481; 4,404,475; 4,450,402; 4,486,769; 4,488,060; 4,520,461; 4,533,846; 4,599,706; 4,617,652; 4,668,932; 4,752,912; 4,829, 482; 4,874, 967; 4,883, 976. Foreign patents and additional patents pending.
LIFE RELATED POLICY In situations where semiconductor component failure may endanger life, system designers using this product should design the system with appropriate error detection and correction, redundancy and back-up features to prevent such an occurence. Xicor's products are not authorized for use in critical components in life support devices or systems. 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2.A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
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